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威顿晶磷产品清单


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序号

产品名称

产品英文名称

Name in English

分子式或缩写

CAS号

结构式

纯度

用途/Application

S/N

Name in Chinese

Acronym/Molecular formula

CAS No.

Structural Formula

Purity

In Chinese

In English

1

硅酸四乙酯

Tetraethyl orthosilicate

TEOS

78-10-4

9N

SiO2/Si3N4薄膜沉积材料。 Used for silicon dioxide/silicon nitride (SiO2/Si3N4) films

2

三甲基铝

Trimethylaluminum

 

TMA

75-24-1

5N、6N

Al2O3钝化层、High-k沉积材料。 Used for Al2O₃ passivation layer and/or high-k dielectric films.

3

三氯氧磷

Phosphorus oxychloride

 

POCl3

10025-87-3

6N、7N

N型掺杂液态磷源。 Used for  N-Type doping.

4

四氯化钛

Titanium tetrachloride

 

TiCl4

7550-45-0

7N

TiN薄膜沉积材料。 Used for TiN films.

5

反式-1,2-二氯乙烯

Trans-1,2-dichloroethylene

 

DCE

156-60-5

7.5N

掺氯氧化和炉管清洗。 Used for chloride-enhanced oxidation and furnace tube cleaning

6

六氯乙硅烷

Hexachlorodisilane

 

HCDS

13465-77-5

7N

SiO2/Si3N4薄膜沉积材料。 Used for silicon dioxide/silicon nitride (SiO2/Si3N4) films.

7

红磷

Red phosphorus

P4

7723-14-0

 

6N

磷化铟(InP)、磷化镓(GaP)合成材料,N型掺杂的固态磷源。

Used for the synthesis of indium phosphide (InP)and gallium phosphide (GaP).

A solid phosphorus source for N-Type doping

8

亚磷酸三甲酯

Trimethyl phosphite

TMP

121-45-9

8.5N

磷硅玻璃(PSG)和硼磷硅玻璃(BPSG)的磷源。 A phosphorus source for the deposition of phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films.

9

磷酸三乙酯

Triethyl phosphate

 

TEPO

78-40-0

8.5N

磷硅玻璃(PSG)和硼磷硅玻璃(BPSG)的磷源。 A phosphorus source for the deposition of phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films.

10

硼酸三乙酯

Triethyl borate

 

TEB

150-46-9

8.5N

磷硅玻璃(PSG)和硼磷硅玻璃(BPSG)的硼源。 A boron source for the deposition of  phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films.

11

硼酸三甲酯

Trimethyl borate

 

TMB

121-43-7

8.5N

磷硅玻璃(PSG)和硼磷硅玻璃(BPSG)的硼源。 A boron source for the deposition of  phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films.

12

三溴化硼

Boron tribromide

 

BBr3

10294-33-4

6N、7N

P型掺杂液态硼源。 A liquid boron source used for P-Type doping.

13

六甲基二硅氮烷

Hexamethyldisilazane

 

HMDS

999-97-3

6N

Low-k沉积材料。 Used for the deposition of low-k dielectric films.

14

四(二甲氨基)硅烷

Tetra(dimethylamino)silane

 

TDMASi

1624-01-7

6N

Si3N4薄膜沉积材料。 Used for the deposition of silicon nitride (Si3N4)  films.

15

双(二乙基氨基)硅烷

Bis(diethylamino)silane

 

BDEAS

27804-64-4

6N

Si3N4薄膜沉积材料。 Used for the deposition of silicon nitride (Si3N4)  films.

16

二异丙基氨基硅烷

Diisopropylaminosilane

 

DIPAS

908831-34-5

6N

Si3N4薄膜沉积材料。 Used for the deposition of silicon nitride (Si3N4)  films.

17

三(二甲基氨基)硅烷

Tris(dimethylamino)silane

 

3DMAS/TDMS

15112-89-7

6N

Si3N4薄膜沉积材料。 Used for the deposition of silicon nitride (Si3N4)  films.

18

双(叔丁基氨基)硅烷

Bis(tert-butylamino)silane

 

BTBAS

186598-40-3

6N

Si3N4薄膜沉积材料。 Used for the deposition of silicon nitride (Si3N4)  films.

19

三硅基氮烷

Tris(silyl)amine

TSA

13862-16-3

6N

Si3N4薄膜沉积材料。 Used for the deposition of silicon nitride (Si3N4)  films.

20

三氯化铟

Indium trichloride

 

InCl3

10025-82-8

6N

In薄膜沉积材料。 Used for the deposition of indium (In) films.

21

二甲基氨基丙基二甲基铟

Dimethyl(Dimethylaminopropyl)indium

 

DADI

120441-92-1

6N

In薄膜沉积材料。 Used for the deposition of indium (In) films.

22

四(二甲基氨基)钛

Tetrakis(dimethylamino)titanium

TDMAT

3275-24-9

6N

TiN薄膜沉积材料。 Used for the deposition of TiN films.

23

三(二甲基氨基)环戊二烯锆

Tris(dimethylamino)(cyclopentadienyl)zirconium

 

CpZr(NMe2)3     [AMG1Zr]

33271-88-4

6N

High-k沉积材料。 Used for the deposition of high-k dielectric films.

24

正丙基环戊二烯三(二甲氨基)锆

(Propylcyclopentadienyl)tris(dimethylamino)zirconium

 

n-PrCpZr(NMe)3 (IPZ235)

2192174-63-1

7N

High-k沉积材料。 Used for the deposition of high-k dielectric films.

25

四(甲乙氨基)锆

Tetrakis(methylethylamino)zirconium

TEMAZr

175923-04-3

6N

High-k沉积材料。 Used for the deposition of high-k dielectric films.

26

四(甲乙氨基)铪

Tetrakis(methylethylamino)hafnium

 

TEMAHf

352535-01-4

6N

High-k沉积材料。 Used for the deposition of high-k dielectric films.

27

四氯化铪

Hafnium tetrachloride

 

HfCl4

13499-05-3

6N

High-k沉积材料。 Used for the deposition of high-k dielectric films.

28

三(二甲氨基)环戊二烯基铪

Tris(dimethylamino)(cyclopentadienyl)hafnium

 

CpHf(NMe2) [AMG1Hf]

941596-80-1

6N

High-k沉积材料。 Used for the deposition of high-k dielectric films.

29

五(二甲基氨基)钽

Pentakis(dimethylamino)tantalum

 

PDMATa

19824-59-0

6N

Ta薄膜沉积材料。 Used for the deposition of tantalum Nitride(TaN) films.

30

(3,3-二甲基-1-丁炔)六羰基二钴

(3,3-dimethyl-1-butynyl)hexacarbonyldicobalt

 

CCTBA

56792-69-9

6N

Co薄膜沉积材料。 Used for the deposition of cobalt (Co) films.

31

二羰基环戊二烯钴

Dicarbonylcyclopentadienylcobalt

 

CpCo(CO)2

12078-25-0

6N

Co薄膜沉积材料。 Used for the deposition of cobalt (Co) films.

32

三(异丙基环戊二烯)镧

Tris(isopropylcyclopentadienyl)lanthanum

 

(i-PrCp)3La

68959-87-5

6N

High-k沉积材料。 Used for the deposition of high-k dielectric films.

33

三(异丙基环戊二烯)铈

Tris(isopropylcyclopentadienyl)cerium

 

(i-PrCp)3Ce

122528-16-9

6N

High-k沉积材料。 Used for the deposition of high-k dielectric films.

34

(叔丁基氨基)双(二甲氨基)(环戊二烯基)铌

(tert-butylimido)bis(dimethylamino)(cyclopentadienyl)niobium

 

CpNb(tBuN)(NMe2)2

1221522-53-7

6N

High-k沉积材料。 Used for the deposition of high-k dielectric films.

35

(五甲基环戊二烯基)三甲氧基钛

(Pentamethylcyclopentadienyl)trimethoxytitanium

 

Star-Ti

123927-75-3

6N

High-k沉积材料。 Used for the deposition of high-k dielectric films.

36

二氯二氧化钼

Dichloro(dioxo)molybdenum(VI)

 

MOLY

13637-68-8

6N

Mo薄膜沉积材料。 Used for the deposition of  molybdenum (Mo) films.

37

六羰基钨

Hexacarbonyltungsten

 

W(CO)6

14040-11-0

6N

W薄膜沉积材料。 Used for the deposition of  tungsten (W) films.

38

六氯化钨

Tungsten hexachloride

 

WCl6

13283-01-7

6N

W薄膜沉积材料。 Used for the deposition of  tungsten (W) films.

39

三氯化铝

Aluminum trichloride

 

AlCl3

7446-70-0

5N

High-k沉积材料。 Used for the deposition of high-k dielectric films.

40

二乙氧基甲基硅烷

Methyldiethoxysilane

 

DEMS,MDES

2031-62-1

7N

Low-k沉积材料。 Used for the deposition of low-k dielectric films.

41

八甲基环四硅氧烷

Octamethylcyclotetrasiloxane

 

OMCTS

556-67-2

9N

Low-k沉积材料。 Used for the deposition of low-k dielectric films.

42

四甲基环四硅氧烷

Tetramethylcyclotetrasiloxane

 

TMCTS

2370-88-9

6N

Low-k沉积材料。 Used for the deposition of low-k dielectric films.

43

二甲基二甲氧基硅烷

Dimethyldimethoxysilane

 

DMDMOS

1112-39-6

7N

Low-k沉积材料。 Used for the deposition of low-k dielectric films.

44

四甲基硅烷

Tetramethylsilane

 

4MS,TMS

75-76-3

7N

Low-k沉积材料。 Used for the deposition of low-k dielectric films.

45

四甲基二硅氧烷

Tetramethyldisiloxane

AP/AM-

1133/TMDSO/HMM

3277-26-7

7.5N

Low-k沉积材料。 Used for the deposition of low-k dielectric films.

46

三乙胺

Triethylamine

 

RENA/TEA

121-44-8

7N

Si3N4薄膜沉积材料。 Used for the deposition of silicon nitride (Si3N4)  films.

47

二碘硅烷

Diiodosilane

H2SiI2

13760-02-6

6N

Low-k沉积材料。 Used for the deposition of low-k dielectric films.- The use of this material is normally for Si3N4?

48

二氯二甲基硅烷

Dichlorodimethylsilane

 

Me2Cl2Si

75-78-5

7N

Low-k沉积材料。 Used for the deposition of low-k dielectric films.

49

α-松油烯

alpha-Terpinene

 

ATRP

99-86-5

7N

Low-k材料造孔剂。 Used as porogen for the deposition of low-k dielectric films

50

五氧化二磷

Phosphorus pentoxide

 

P2O5

1314-56-3

6N

KDP、KTP、DKDP 等激光晶体合成材料。 Used for the synthesis ofKDP, KTP and DKDP materials.

51

三氯乙烯

Trichloroethylene

TCE

79-01-6

7N

溶剂或清洗剂。

Solvent or cleaning agent.

52

己烷

Hexane

 

Hexane

110-54-3

7N

溶剂或清洗剂。

Solvent or cleaning agent.

53

辛烷

Octane

 

Octane

111-65-9

7N

溶剂或清洗剂。

Solvent or cleaning agent.

54

1-己烯

1-Hexene

 

1-Hexene

592-41-6

7N

溶剂或清洗剂。

Solvent or cleaning agent.

55

甲基铝氧烷

Methylaluminoxane

 

MAO


120144-90-3

 

 

茂金属聚烯烃助催化剂。 Used as co-catalyst with metallocenes for the olefin polymerization.

56

异丁基改性甲基铝氧烷

Isobutyl-modified methylaluminoxane

 

B-MAO(MMAO-3)

 

 

 

茂金属聚烯烃助催化剂。 Used as co-catalyst with metallocenes for the ethylene oligomerization.

57

辛基改性甲基铝氧烷

Octyl-modified methylaluminoxane

 

O-MAO(MMAO-7)

 

 

 

茂金属聚烯烃助催化剂。 Used as co-catalyst with metallocenes for the olefin polymerization.

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