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序号	产品名称	产品英文名称	分子式或缩写	CAS号	结构式	纯度	用途/Application
S/N	Name in Chinese	Name in English	Acronym/Molecular formula	CAS No.	Structural Formula	Purity	In Chinese	In English
1	硅酸四乙酯	Tetraethyl orthosilicate	TEOS	78-10-4		9N	SiO₂/Si₃N₄薄膜沉积材料。	Used for silicon dioxide/silicon nitride (SiO₂/Si₃N₄) films
2	三甲基铝	Trimethylaluminum	TMA	75-24-1		5N、6N	Al₂O₃钝化层、High-k沉积材料。	Used for Al₂O₃ passivation layer and/or high-k dielectric films.
3	三氯氧磷	Phosphorus oxychloride	POCl₃	10025-87-3		6N、7N	N型掺杂液态磷源。	Used for N-Type doping.
4	四氯化钛	Titanium tetrachloride	TiCl₄	7550-45-0		7N	TiN薄膜沉积材料。	Used for TiN films.
5	反式-1，2-二氯乙烯	Trans-1,2-dichloroethylene	DCE	156-60-5		7.5N	掺氯氧化和炉管清洗。	Used for chloride-enhanced oxidation and furnace tube cleaning
6	六氯乙硅烷	Hexachlorodisilane	HCDS	13465-77-5		7N	SiO₂/Si₃N₄薄膜沉积材料。	Used for silicon dioxide/silicon nitride (SiO₂/Si₃N₄) films.
7	红磷	Red phosphorus	P₄	7723-14-0		6N	磷化铟（InP）、磷化镓（GaP）合成材料，N型掺杂的固态磷源。	Used for the synthesis of indium phosphide (InP)and gallium phosphide (GaP). A solid phosphorus source for N-Type doping
8	亚磷酸三甲酯	Trimethyl phosphite	TMP	121-45-9		8.5N	磷硅玻璃（PSG）和硼磷硅玻璃（BPSG）的磷源。	A phosphorus source for the deposition of phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films.
9	磷酸三乙酯	Triethyl phosphate	TEPO	78-40-0		8.5N	磷硅玻璃（PSG）和硼磷硅玻璃（BPSG）的磷源。	A phosphorus source for the deposition of phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films.
10	硼酸三乙酯	Triethyl borate	TEB	150-46-9		8.5N	磷硅玻璃（PSG）和硼磷硅玻璃（BPSG）的硼源。	A boron source for the deposition of phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films.
11	硼酸三甲酯	Trimethyl borate	TMB	121-43-7		8.5N	磷硅玻璃（PSG）和硼磷硅玻璃（BPSG）的硼源。	A boron source for the deposition of phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films.
12	三溴化硼	Boron tribromide	BBr₃	10294-33-4		6N、7N	P型掺杂液态硼源。	A liquid boron source used for P-Type doping.
13	六甲基二硅氮烷	Hexamethyldisilazane	HMDS	999-97-3		6N	Low-k沉积材料。	Used for the deposition of low-k dielectric films.
14	四（二甲氨基）硅烷	Tetra(dimethylamino)silane	TDMASi	1624-01-7		6N	Si₃N₄薄膜沉积材料。	Used for the deposition of silicon nitride (Si₃N₄) films.
15	双（二乙基氨基）硅烷	Bis(diethylamino)silane	BDEAS	27804-64-4		6N	Si₃N₄薄膜沉积材料。	Used for the deposition of silicon nitride (Si₃N₄) films.
16	二异丙基氨基硅烷	Diisopropylaminosilane	DIPAS	908831-34-5		6N	Si₃N₄薄膜沉积材料。	Used for the deposition of silicon nitride (Si₃N₄) films.
17	三(二甲基氨基)硅烷	Tris(dimethylamino)silane	3DMAS/TDMS	15112-89-7		6N	Si₃N₄薄膜沉积材料。	Used for the deposition of silicon nitride (Si₃N₄) films.
18	双(叔丁基氨基)硅烷	Bis(tert-butylamino)silane	BTBAS	186598-40-3		6N	Si₃N₄薄膜沉积材料。	Used for the deposition of silicon nitride (Si₃N₄) films.
19	三硅基氮烷	Tris(silyl)amine	TSA	13862-16-3		6N	Si₃N₄薄膜沉积材料。	Used for the deposition of silicon nitride (Si₃N₄) films.
20	三氯化铟	Indium trichloride	InCl₃	10025-82-8		6N	In薄膜沉积材料。	Used for the deposition of indium (In) films.
21	二甲基氨基丙基二甲基铟	Dimethyl(Dimethylaminopropyl)indium	DADI	120441-92-1		6N	In薄膜沉积材料。	Used for the deposition of indium (In) films.
22	四（二甲基氨基）钛	Tetrakis(dimethylamino)titanium	TDMAT	3275-24-9		6N	TiN薄膜沉积材料。	Used for the deposition of TiN films.
23	三（二甲基氨基）环戊二烯锆	Tris(dimethylamino)(cyclopentadienyl)zirconium	CpZr(NMe₂)₃ [AMG1Zr]	33271-88-4		6N	High-k沉积材料。	Used for the deposition of high-k dielectric films.
24	正丙基环戊二烯三（二甲氨基）锆	(Propylcyclopentadienyl)tris(dimethylamino)zirconium	n-PrCpZr(NMe)₃(IPZ235)	2192174-63-1		7N	High-k沉积材料。	Used for the deposition of high-k dielectric films.
25	四（甲乙氨基）锆	Tetrakis(methylethylamino)zirconium	TEMAZr	175923-04-3		6N	High-k沉积材料。	Used for the deposition of high-k dielectric films.
26	四（甲乙氨基）铪	Tetrakis(methylethylamino)hafnium	TEMAHf	352535-01-4		6N	High-k沉积材料。	Used for the deposition of high-k dielectric films.
27	四氯化铪	Hafnium tetrachloride	HfCl₄	13499-05-3		6N	High-k沉积材料。	Used for the deposition of high-k dielectric films.
28	三（二甲氨基）环戊二烯基铪	Tris(dimethylamino)(cyclopentadienyl)hafnium	CpHf(NMe₂)₃ [AMG1Hf]	941596-80-1		6N	High-k沉积材料。	Used for the deposition of high-k dielectric films.
29	五（二甲基氨基）钽	Pentakis(dimethylamino)tantalum	PDMATa	19824-59-0		6N	Ta薄膜沉积材料。	Used for the deposition of tantalum Nitride(TaN) films.
30	(3,3-二甲基-1-丁炔)六羰基二钴	(3,3-dimethyl-1-butynyl)hexacarbonyldicobalt	CCTBA	56792-69-9		6N	Co薄膜沉积材料。	Used for the deposition of cobalt (Co) films.
31	二羰基环戊二烯钴	Dicarbonylcyclopentadienylcobalt	CpCo(CO)₂	12078-25-0		6N	Co薄膜沉积材料。	Used for the deposition of cobalt (Co) films.
32	三(异丙基环戊二烯)镧	Tris(isopropylcyclopentadienyl)lanthanum	(i-PrCp)₃La	68959-87-5		6N	High-k沉积材料。	Used for the deposition of high-k dielectric films.
33	三(异丙基环戊二烯)铈	Tris(isopropylcyclopentadienyl)cerium	(i-PrCp)₃Ce	122528-16-9		6N	High-k沉积材料。	Used for the deposition of high-k dielectric films.
34	(叔丁基氨基)双(二甲氨基)(环戊二烯基)铌	(tert-butylimido)bis(dimethylamino)(cyclopentadienyl)niobium	CpNb(^tBuN)(NMe₂)₂	1221522-53-7		6N	High-k沉积材料。	Used for the deposition of high-k dielectric films.
35	（五甲基环戊二烯基）三甲氧基钛	(Pentamethylcyclopentadienyl)trimethoxytitanium	Star-Ti	123927-75-3		6N	High-k沉积材料。	Used for the deposition of high-k dielectric films.
36	二氯二氧化钼	Dichloro(dioxo)molybdenum(VI)	MOLY	13637-68-8		6N	Mo薄膜沉积材料。	Used for the deposition of molybdenum (Mo) films.
37	六羰基钨	Hexacarbonyltungsten	W(CO)₆	14040-11-0		6N	W薄膜沉积材料。	Used for the deposition of tungsten (W) films.
38	六氯化钨	Tungsten hexachloride	WCl₆	13283-01-7		6N	W薄膜沉积材料。	Used for the deposition of tungsten (W) films.
39	三氯化铝	Aluminum trichloride	AlCl₃	7446-70-0		5N	High-k沉积材料。	Used for the deposition of high-k dielectric films.
40	二乙氧基甲基硅烷	Methyldiethoxysilane	DEMS,MDES	2031-62-1		7N	Low-k沉积材料。	Used for the deposition of low-k dielectric films.
41	八甲基环四硅氧烷	Octamethylcyclotetrasiloxane	OMCTS	556-67-2		9N	Low-k沉积材料。	Used for the deposition of low-k dielectric films.
42	四甲基环四硅氧烷	Tetramethylcyclotetrasiloxane	TMCTS	2370-88-9		6N	Low-k沉积材料。	Used for the deposition of low-k dielectric films.
43	二甲基二甲氧基硅烷	Dimethyldimethoxysilane	DMDMOS	1112-39-6		7N	Low-k沉积材料。	Used for the deposition of low-k dielectric films.
44	四甲基硅烷	Tetramethylsilane	4MS,TMS	75-76-3		7N	Low-k沉积材料。	Used for the deposition of low-k dielectric films.
45	四甲基二硅氧烷	Tetramethyldisiloxane	AP/AM- 1133/TMDSO/HMM	3277-26-7		7.5N	Low-k沉积材料。	Used for the deposition of low-k dielectric films.
46	三乙胺	Triethylamine	RENA/TEA	121-44-8		7N	Si₃N₄薄膜沉积材料。	Used for the deposition of silicon nitride (Si₃N₄) films.
47	二碘硅烷	Diiodosilane	H₂SiI₂	13760-02-6		6N	Low-k沉积材料。	Used for the deposition of low-k dielectric films.- The use of this material is normally for Si₃N₄?
48	二氯二甲基硅烷	Dichlorodimethylsilane	Me₂Cl₂Si	75-78-5		7N	Low-k沉积材料。	Used for the deposition of low-k dielectric films.
49	α-松油烯	alpha-Terpinene	ATRP	99-86-5		7N	Low-k材料造孔剂。	Used as porogen for the deposition of low-k dielectric films
50	五氧化二磷	Phosphorus pentoxide	P₂O₅	1314-56-3		6N	KDP、KTP、DKDP 等激光晶体合成材料。	Used for the synthesis ofKDP, KTP and DKDP materials.
51	三氯乙烯	Trichloroethylene	TCE	79-01-6		7N	溶剂或清洗剂。	Solvent or cleaning agent.
52	己烷	Hexane	Hexane	110-54-3		7N	溶剂或清洗剂。	Solvent or cleaning agent.
53	辛烷	Octane	Octane	111-65-9		7N	溶剂或清洗剂。	Solvent or cleaning agent.
54	1-己烯	1-Hexene	1-Hexene	592-41-6		7N	溶剂或清洗剂。	Solvent or cleaning agent.
55	甲基铝氧烷	Methylaluminoxane	MAO	120144-90-3			茂金属聚烯烃助催化剂。	Used as co-catalyst with metallocenes for the olefin polymerization.
56	异丁基改性甲基铝氧烷	Isobutyl-modified methylaluminoxane	B-MAO（MMAO-3）				茂金属聚烯烃助催化剂。	Used as co-catalyst with metallocenes for the ethylene oligomerization.
57	辛基改性甲基铝氧烷	Octyl-modified methylaluminoxane	O-MAO（MMAO-7）				茂金属聚烯烃助催化剂。	Used as co-catalyst with metallocenes for the olefin polymerization.