详情介绍
序号 |
产品名称 |
产品英文名称 Name in English |
分子式或缩写 |
CAS号 |
结构式 |
纯度 |
用途/Application |
|
S/N |
Name in Chinese |
Acronym/Molecular formula |
CAS No. |
Structural Formula |
Purity |
In Chinese |
In English |
|
1 |
硅酸四乙酯 |
Tetraethyl orthosilicate |
TEOS |
78-10-4 |
|
9N |
SiO2/Si3N4薄膜沉积材料。 | Used for silicon dioxide/silicon nitride (SiO2/Si3N4) films |
2 |
三甲基铝 |
Trimethylaluminum
|
TMA |
75-24-1 |
|
5N、6N |
Al2O3钝化层、High-k沉积材料。 | Used for Al2O₃ passivation layer and/or high-k dielectric films. |
3 |
三氯氧磷 |
Phosphorus oxychloride
|
POCl3 |
10025-87-3 |
|
6N、7N |
N型掺杂液态磷源。 | Used for N-Type doping. |
4 |
四氯化钛 |
Titanium tetrachloride
|
TiCl4 |
7550-45-0 |
|
7N |
TiN薄膜沉积材料。 | Used for TiN films. |
5 |
反式-1,2-二氯乙烯 |
Trans-1,2-dichloroethylene
|
DCE |
156-60-5 |
|
7.5N |
掺氯氧化和炉管清洗。 | Used for chloride-enhanced oxidation and furnace tube cleaning |
6 |
六氯乙硅烷 |
Hexachlorodisilane
|
HCDS |
13465-77-5 |
|
7N |
SiO2/Si3N4薄膜沉积材料。 | Used for silicon dioxide/silicon nitride (SiO2/Si3N4) films. |
7 |
红磷 |
Red phosphorus |
P4 |
7723-14-0 |
|
6N |
磷化铟(InP)、磷化镓(GaP)合成材料,N型掺杂的固态磷源。 |
Used for the synthesis of indium phosphide (InP)and gallium phosphide (GaP). A solid phosphorus source for N-Type doping |
8 |
亚磷酸三甲酯 |
Trimethyl phosphite |
TMP |
121-45-9 |
|
8.5N |
磷硅玻璃(PSG)和硼磷硅玻璃(BPSG)的磷源。 | A phosphorus source for the deposition of phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films. |
9 |
磷酸三乙酯 |
Triethyl phosphate
|
TEPO |
78-40-0 |
|
8.5N |
磷硅玻璃(PSG)和硼磷硅玻璃(BPSG)的磷源。 | A phosphorus source for the deposition of phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films. |
10 |
硼酸三乙酯 |
Triethyl borate
|
TEB |
150-46-9 |
|
8.5N |
磷硅玻璃(PSG)和硼磷硅玻璃(BPSG)的硼源。 | A boron source for the deposition of phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films. |
11 |
硼酸三甲酯 |
Trimethyl borate
|
TMB |
121-43-7 |
|
8.5N |
磷硅玻璃(PSG)和硼磷硅玻璃(BPSG)的硼源。 | A boron source for the deposition of phosphosilicate glass (PSG) and boro-phosphosilicate glass (BPSG) films. |
12 |
三溴化硼 |
Boron tribromide
|
BBr3 |
10294-33-4 |
|
6N、7N |
P型掺杂液态硼源。 | A liquid boron source used for P-Type doping. |
13 |
六甲基二硅氮烷 |
Hexamethyldisilazane
|
HMDS |
999-97-3 |
|
6N |
Low-k沉积材料。 | Used for the deposition of low-k dielectric films. |
14 |
四(二甲氨基)硅烷 |
Tetra(dimethylamino)silane
|
TDMASi |
1624-01-7 |
|
6N |
Si3N4薄膜沉积材料。 | Used for the deposition of silicon nitride (Si3N4) films. |
15 |
双(二乙基氨基)硅烷 |
Bis(diethylamino)silane
|
BDEAS |
27804-64-4 |
|
6N |
Si3N4薄膜沉积材料。 | Used for the deposition of silicon nitride (Si3N4) films. |
16 |
二异丙基氨基硅烷 |
Diisopropylaminosilane
|
DIPAS |
908831-34-5 |
|
6N |
Si3N4薄膜沉积材料。 | Used for the deposition of silicon nitride (Si3N4) films. |
17 |
三(二甲基氨基)硅烷 |
Tris(dimethylamino)silane
|
3DMAS/TDMS |
15112-89-7 |
|
6N |
Si3N4薄膜沉积材料。 | Used for the deposition of silicon nitride (Si3N4) films. |
18 |
双(叔丁基氨基)硅烷 |
Bis(tert-butylamino)silane
|
BTBAS |
186598-40-3 |
|
6N |
Si3N4薄膜沉积材料。 | Used for the deposition of silicon nitride (Si3N4) films. |
19 |
三硅基氮烷 |
Tris(silyl)amine |
TSA |
13862-16-3 |
|
6N |
Si3N4薄膜沉积材料。 | Used for the deposition of silicon nitride (Si3N4) films. |
20 |
三氯化铟 |
Indium trichloride
|
InCl3 |
10025-82-8 |
|
6N |
In薄膜沉积材料。 | Used for the deposition of indium (In) films. |
21 |
二甲基氨基丙基二甲基铟 |
Dimethyl(Dimethylaminopropyl)indium
|
DADI |
120441-92-1 |
|
6N |
In薄膜沉积材料。 | Used for the deposition of indium (In) films. |
22 |
四(二甲基氨基)钛 |
Tetrakis(dimethylamino)titanium |
TDMAT |
3275-24-9 |
|
6N |
TiN薄膜沉积材料。 | Used for the deposition of TiN films. |
23 |
三(二甲基氨基)环戊二烯锆 |
Tris(dimethylamino)(cyclopentadienyl)zirconium
|
CpZr(NMe2)3 [AMG1Zr] |
33271-88-4 |
|
6N |
High-k沉积材料。 | Used for the deposition of high-k dielectric films. |
24 |
正丙基环戊二烯三(二甲氨基)锆 |
(Propylcyclopentadienyl)tris(dimethylamino)zirconium
|
n-PrCpZr(NMe)3 (IPZ235) |
2192174-63-1 |
|
7N |
High-k沉积材料。 | Used for the deposition of high-k dielectric films. |
25 |
四(甲乙氨基)锆 |
Tetrakis(methylethylamino)zirconium |
TEMAZr |
175923-04-3 |
|
6N |
High-k沉积材料。 | Used for the deposition of high-k dielectric films. |
26 |
四(甲乙氨基)铪 |
Tetrakis(methylethylamino)hafnium
|
TEMAHf |
352535-01-4 |
|
6N |
High-k沉积材料。 | Used for the deposition of high-k dielectric films. |
27 |
四氯化铪 |
Hafnium tetrachloride
|
HfCl4 |
13499-05-3 |
|
6N |
High-k沉积材料。 | Used for the deposition of high-k dielectric films. |
28 |
三(二甲氨基)环戊二烯基铪 |
Tris(dimethylamino)(cyclopentadienyl)hafnium
|
CpHf(NMe2)3 [AMG1Hf] |
941596-80-1 |
|
6N |
High-k沉积材料。 | Used for the deposition of high-k dielectric films. |
29 |
五(二甲基氨基)钽 |
Pentakis(dimethylamino)tantalum
|
PDMATa |
19824-59-0 |
|
6N |
Ta薄膜沉积材料。 | Used for the deposition of tantalum Nitride(TaN) films. |
30 |
(3,3-二甲基-1-丁炔)六羰基二钴 |
(3,3-dimethyl-1-butynyl)hexacarbonyldicobalt
|
CCTBA |
56792-69-9 |
|
6N |
Co薄膜沉积材料。 | Used for the deposition of cobalt (Co) films. |
31 |
二羰基环戊二烯钴 |
Dicarbonylcyclopentadienylcobalt
|
CpCo(CO)2 |
12078-25-0 |
|
6N |
Co薄膜沉积材料。 | Used for the deposition of cobalt (Co) films. |
32 |
三(异丙基环戊二烯)镧 |
Tris(isopropylcyclopentadienyl)lanthanum
|
(i-PrCp)3La |
68959-87-5 |
|
6N |
High-k沉积材料。 | Used for the deposition of high-k dielectric films. |
33 |
三(异丙基环戊二烯)铈 |
Tris(isopropylcyclopentadienyl)cerium
|
(i-PrCp)3Ce |
122528-16-9 |
|
6N |
High-k沉积材料。 | Used for the deposition of high-k dielectric films. |
34 |
(叔丁基氨基)双(二甲氨基)(环戊二烯基)铌 |
(tert-butylimido)bis(dimethylamino)(cyclopentadienyl)niobium
|
CpNb(tBuN)(NMe2)2 |
1221522-53-7 |
|
6N |
High-k沉积材料。 | Used for the deposition of high-k dielectric films. |
35 |
(五甲基环戊二烯基)三甲氧基钛 |
(Pentamethylcyclopentadienyl)trimethoxytitanium
|
Star-Ti |
123927-75-3 |
|
6N |
High-k沉积材料。 | Used for the deposition of high-k dielectric films. |
36 |
二氯二氧化钼 |
Dichloro(dioxo)molybdenum(VI)
|
MOLY |
13637-68-8 |
|
6N |
Mo薄膜沉积材料。 | Used for the deposition of molybdenum (Mo) films. |
37 |
六羰基钨 |
Hexacarbonyltungsten
|
W(CO)6 |
14040-11-0 |
|
6N |
W薄膜沉积材料。 | Used for the deposition of tungsten (W) films. |
38 |
六氯化钨 |
Tungsten hexachloride
|
WCl6 |
13283-01-7 |
|
6N |
W薄膜沉积材料。 | Used for the deposition of tungsten (W) films. |
39 |
三氯化铝 |
Aluminum trichloride
|
AlCl3 |
7446-70-0 |
|
5N |
High-k沉积材料。 | Used for the deposition of high-k dielectric films. |
40 |
二乙氧基甲基硅烷 |
Methyldiethoxysilane
|
DEMS,MDES |
2031-62-1 |
|
7N |
Low-k沉积材料。 | Used for the deposition of low-k dielectric films. |
41 |
八甲基环四硅氧烷 |
Octamethylcyclotetrasiloxane
|
OMCTS |
556-67-2 |
|
9N |
Low-k沉积材料。 | Used for the deposition of low-k dielectric films. |
42 |
四甲基环四硅氧烷 |
Tetramethylcyclotetrasiloxane
|
TMCTS |
2370-88-9 |
|
6N |
Low-k沉积材料。 | Used for the deposition of low-k dielectric films. |
43 |
二甲基二甲氧基硅烷 |
Dimethyldimethoxysilane
|
DMDMOS |
1112-39-6 |
|
7N |
Low-k沉积材料。 | Used for the deposition of low-k dielectric films. |
44 |
四甲基硅烷 |
Tetramethylsilane
|
4MS,TMS |
75-76-3 |
|
7N |
Low-k沉积材料。 | Used for the deposition of low-k dielectric films. |
45 |
四甲基二硅氧烷 |
Tetramethyldisiloxane |
AP/AM- 1133/TMDSO/HMM |
3277-26-7 |
|
7.5N |
Low-k沉积材料。 | Used for the deposition of low-k dielectric films. |
46 |
三乙胺 |
Triethylamine
|
RENA/TEA |
121-44-8 |
|
7N |
Si3N4薄膜沉积材料。 | Used for the deposition of silicon nitride (Si3N4) films. |
47 |
二碘硅烷 |
Diiodosilane |
H2SiI2 |
13760-02-6 |
|
6N |
Low-k沉积材料。 | Used for the deposition of low-k dielectric films.- The use of this material is normally for Si3N4? |
48 |
二氯二甲基硅烷 |
Dichlorodimethylsilane
|
Me2Cl2Si |
75-78-5 |
|
7N |
Low-k沉积材料。 | Used for the deposition of low-k dielectric films. |
49 |
α-松油烯 |
alpha-Terpinene
|
ATRP |
99-86-5 |
|
7N |
Low-k材料造孔剂。 | Used as porogen for the deposition of low-k dielectric films |
50 |
五氧化二磷 |
Phosphorus pentoxide
|
P2O5 |
1314-56-3 |
|
6N |
KDP、KTP、DKDP 等激光晶体合成材料。 | Used for the synthesis ofKDP, KTP and DKDP materials. |
51 |
三氯乙烯 |
Trichloroethylene |
TCE |
79-01-6 |
|
7N |
溶剂或清洗剂。 |
Solvent or cleaning agent. |
52 |
己烷 |
Hexane
|
Hexane |
110-54-3 |
|
7N |
溶剂或清洗剂。 |
Solvent or cleaning agent. |
53 |
辛烷 |
Octane
|
Octane |
111-65-9 |
|
7N |
溶剂或清洗剂。 |
Solvent or cleaning agent. |
54 |
1-己烯 |
1-Hexene
|
1-Hexene |
592-41-6 |
|
7N |
溶剂或清洗剂。 |
Solvent or cleaning agent. |
55 |
甲基铝氧烷 |
Methylaluminoxane
|
MAO |
|
|
|
茂金属聚烯烃助催化剂。 | Used as co-catalyst with metallocenes for the olefin polymerization. |
56 |
异丁基改性甲基铝氧烷 |
Isobutyl-modified methylaluminoxane
|
B-MAO(MMAO-3) |
|
|
|
茂金属聚烯烃助催化剂。 | Used as co-catalyst with metallocenes for the ethylene oligomerization. |
57 |
辛基改性甲基铝氧烷 |
Octyl-modified methylaluminoxane
|
O-MAO(MMAO-7) |
|
|
|
茂金属聚烯烃助催化剂。 | Used as co-catalyst with metallocenes for the olefin polymerization. |
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